2sa1418 / 2sc3648 no.1788-1/7 applicaitons ? color tv audio output, inverter features ? adoption of fbet, mbit processes ? high breakdown voltage and large current capacity ? fast switching speed ? ultrasmall size making it easy to provide high-density, small-sized hybrid ic?s speci cations ( ) : 2sa1418 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)180 v collector-to-emitter voltage v ceo (--)160 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)0.7 a collector current (pulse) i cp (--)1.5 a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : en1788c 82212 tkim/31010cb tkim/o3103tn (kt)/71598ha (kt)/3277ki/2255mw, ts sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sa1418s-td-e 2sc3648s-td-e 2sc3648t-td-e ad lot no. cd lot no. 2sc3648 2sa1418 rank rank 2 3 1 2sc3648 2 3 1 2sa1418 2sa1418/2sc3648 pnp / npn epitaxial planar silicon transistor high-voltage switching, preriver applications
2sa1418 / 2sc3648 no.1788-2/7 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 500 mw when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)120v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a dc current gain h fe 1v ce =(--)5v, i c =(--)100ma 100* 400* h fe 2v ce =(--)5v, i c =(--)10ma 90 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (11)8 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)250ma, i b =(--)25ma (--0.2)0.12 (--0.5)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)250ma, i b =(--)25ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)180 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)160 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (60)50 ns storage time t stg (900)1000 ns fall time t f (60)60 ns * : the 2sa1418 / 2sc3648 are classi ed by 100ma h fe as follows : rank r s t h fe 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sa1418s-td-e pcp 1,000pcs./reel pb free 2sc3648s-td-e pcp 1,000pcs./reel 2sc3648t-td-e pcp 1,000pcs./reel input 100v 50 100 f 470 f --5v i c =20i b1 =--20i b2 =300ma (for pnp, the polarity is reversed) + + v r pw=20 s d.c. 1% 333 r b i b1 i b2
2sa1418 / 2sc3648 no.1788-3/7 i c -- v ce collector current, i c -- ma collector-to-emitter voltage, v ce -- mv i c -- v ce collector current, i c -- ma collector-to-emitter voltage, v ce -- mv v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma h fe -- i c collector current, i c -- ma dc current gain, h fe i c -- v ce collector current, i c -- ma collector-to-emitter voltage, v ce -- v i c -- v ce collector current, i c -- ma collector-to-emitter voltage, v ce -- v h fe -- i c collector current, i c -- ma dc current gain, h fe itr03565 itr03564 2 -- 10 57 73 2 -- 100 2 -- 1000 57 3 5 3 1000 2 3 5 7 100 2 3 5 7 10 3 5 7 2 10 57 73 2 100 2 1000 57 3 5 3 1000 2 3 5 7 100 2 3 5 7 10 3 5 7 itr03563 itr03562 itr03560 0.6 0.8 0 0.4 0.2 1.0 1.2 0 200 800 1000 600 400 57 3 57 32 57 3 2 10 100 2 1000 1.0 10 5 7 3 2 0.1 5 7 3 2 5 7 3 2 itr03561 2sa1418 / 2sc3648 v ce =5v for pnp, minus sign is omitted 2sa1418 pulse 2sa1418 2sc3648 v ce =--2v 2sa1418 --2.5ma --2.0ma --3.0ma --4.0ma --4.5ma --5.0ma --3.5ma --1.5ma --1.0ma --0.5ma i b =0ma 0 --20 --30 --10 --50 --60 --70 --40 --80 0 --100 --200 --400 --300 --600 --500 --700 --800 02030 10 50 60 70 40 80 0 200 400 600 800 1000 2sc3648 i b =0ma 0.5ma 2.5ma 3.0ma 4.0ma 3.5ma 2.0ma 1.5ma 1.0ma 2sa1418 2sc3648 2sa1418 / 2sc3648 i c / i b=10 for pnp, minus sign is omitted --5v --10v 2sc3648 pulse v ce =2v 5v 10v itr03558 0 --400 --200 --800 --600 --1000 400 200 800 600 1000 0 0 --100 --200 --400 --300 --600 --500 --700 --800 0 0 100 200 400 300 600 500 700 800 itr03559 --80ma --100ma --140ma --180ma --200ma --40ma --60ma --20ma i b =0ma 2sa1418 2sc3648 i b =0ma 80ma 90ma 30ma 20ma 10ma 40ma 50ma --160ma --120ma 100ma 60ma 70ma from top from top
2sa1418 / 2sc3648 no.1788-4/7 p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a f t -- i c gain-brandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf f t -- i c collector current, i c -- ma collector current, i c -- ma cob -- v cb itr03568 1.0 3 10 5 7 2 3 100 5 7 2 0.01 3 0.1 5 7 5 7 2 3 5 7 2 3 2 1.0 10 1.0 57 3 2 100 57 3 22 1.0 3 2 1.6 1.4 1.8 1.2 0.8 0.4 0.2 0.6 1.0 0 06080 40 20 140 120 100 160 itr03569 itr03570 mounted on a ceramic board (250mm 2 ? 0.8mm) no heat sink 7 10 53 23 2 7 5 100 for pnp, minus sign is omitted 2sa1418 2sc3648 2sa1418 / 2sc3648 f=1mhz 1ms 10ms 100ms dc operation 2sa1418 / 2sc3648 2 -- 10 7 5 -- 100 7 5 32 -- 1000 7 5 3 100 10 2 3 5 7 2 3 5 2 10 7 5 100 7 5 32 1000 7 5 3 100 10 2 3 5 7 2 3 5 itr03566 itr03567 2sc3648 2sa1418 v ce =5v 10v v ce =10v 5v i cp =1.5a i c =0.7a ta=25 c single pulse mounted on a ceramic board (250mm 2 ? 0.8mm) for pnp, minus sign is omitted gain-brandwidth product, f t -- mhz
2sa1418 / 2sc3648 no.1788-5/7 bag packing speci cation 2sa1418s-td-e, 2sc3648s-td-e, 2sc3648t-td-e
2sa1418 / 2sc3648 no.1788-6/7 outline drawing land pattern example 2sa1418s-td-e, 2sc3648s-td-e, 2sc3648t-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sa1418 / 2sc3648 ps no.1788-7/7 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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